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1.
Klaus H. Ploog, Paul Drude Institute, Berlin, Germany,
“Composition fluctuations, clustering and defects in (Ga,In)(N,As) layers
for 1.5 µm emitters”
2.
Chris G. Van de Walle, University of California at Santa Barbara,
USA. “Defect physics and nonstoichiometry in wide-band-gap
semiconductors”
3.
Wladyslaw Walukiewicz, Lawrence Berkeley National Laboratory, USA.
“Defects in highly mismatched semiconductor alloys”
4.
Joerg Weber, Institute fuer Argewandte Physik, TU Dresden, Germany.
“Hydrogen in semiconductors: A tool to study defects”
5.
Achim Trampert, Paul Drude Institute, Berlin, Germany. “Defects in
M-Plane and C-Plane GaN: A comparative TEM study”
6.
Hisao Makino, Tohoku University, Japan. “The band structure of InN
studied by optical spectroscopy and photoemission spectroscopy”
7.
S. F. Chichibu, University of Tsukuba, Japan. “Defect
studies of ZnO by time-resolved photoluminescence and positron annihilation
spectroscopy”
8.
Takahiro Wada, Ryukoku University, Japan,
“Pulsed laser
deposition of non-lead ferroelectric thin films using high-density ceramic
targets”“Pulsed laser
deposition of non-lead ferroelectric thin films using high-density ceramic
targets”
9.
Elena Rogacheva, National Technical University, Ukraine. “The
problem of doping of non-stoichiometric phases”
10.
Katsuaki Sato, Tokyo Univ. of Agriculture and Technology, Japan.
“Role of point defects and nonstoichiometry in novel ternary magnetic
semiconductors”
11.
Hisanori Yamane, Tohoku University, Japan. “Preparation of GaN
single crystals using a Na flux”
12.
Takeo Takizawa, Nihon University, Japan. “Single crystal growth of
RE doped thiogallates and their optical properties”
13.
Kenji Kitamura, Kyushu University, Japan. “Influence of
nonstoichiometric defect density on material constants and kinetic
properties”
14.
Shigeru Niki, Research Center for Photovoltaics, Japan.
“Deposition of high quality ZnO thin films”
15.
Hiroshi Katayama-Yoshida, Osaka University, Japan. “Materials
design for semiconductor nano-spintronics”
16.
Masafumi Shirai, Tohoku University, Japan. “Defects in the
spintronic materials”
17.
Fumio Sato,
Japan
Broadcasting Corporation,
Japan. “Crystalinity improvement of deposited films by X-ray excitation”
18.
Hideomi Koinuma, Tokyo Institute of Technology, Japan. “New
approaches to perfect epitaxy and single crystal film growth of functional
oxides”
19.
T. Okino, Oita University, Japan. “Formation
Mechanisms of Grown-in Defects in Silicon”
20.
Jean-Francois Guillemoles, CISEL/ENSCP( Paris), France. “Thin film
solar cells based on CIS-related chalcopyrites”
21.
Yasuhiko Ishikawa, Shizuoka University, Japan. “Artificial
dislocation network in SOI nanodevices and its transport characteristics”
22.
J.
Raynien Kwo, National Tsing Hua university, Taiwan-ROC. “Recent
Advances in High k Dielectric Oxides for Nanoelectronics”
23.
Yukinori Ono, NTT Basic Research Lab., Japan. “Single-electron
manipulation; Interplay with crystalline imperfections”
24.
Seiichi Miyazaki, Hiroshima University, Japan. “Electron charging
and discharging characteristics of Si-based quantum dots floating gate”
25.
Robert Feigelson, Standford University, USA, “Influence of point
defects and dislocations on the infrared optical absorption of ternary
semiconductor”
26.
N. Stolwijk, Universitaet Muenster, Germany.
“Diffusion in semiconductors as a means to
determine point-defect properties at high temperatures”
27. Yutaka Oyama, Tohoku
University, Japan. "Defect
aspects in ultra shallow GaAs sidewall tunnel junctions implemented with
molecular layer epitaxy"
28.
Hans
J. Queisser, Max-Planck-Institute for solid state research, Germany. “Solidity
is an Imperfect State” 29.
Jung-Min Hwang, National Tsing Hua University, Taiwan.
“Etching
technology requirement for III-nitride structure scaling down from micro to
nano-scale”
30. Hsueh
Hsin Chang, National
Tsing Hua University, Taiwan. “Review
on the Defect Chemistry Calculations of Non-stoichiometric Semiconductor” |